Electrical properties of chemical vapor deposited silicon oxide films for applications as interlayer dielectrics in ULSI

Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report

Volumn 1, Issue , 1997, Pages 150-153

  Loiko, Konstantin V ^a   Vassiliev, Vladislav Y ^a   Chua, Chee Tee ^a   Lim, David H Y ^a  

^a Chartered Semiconductor   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOROPHOSPHATE GLASS; BOROSILICATE GLASS; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SILICA; SILICON WAFERS; ULSI CIRCUITS; VOLTAGE MEASUREMENT;

BOROPHOSPHOSILICATE GLASS; SURFACE PHOTOVOLTAGE (SPV) MEASUREMENTS;

DIELECTRIC FILMS;

EID: 0031356015     PISSN: 00849162     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)