Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

  Ker, Ming Dou ^a   Tseng, Tang Kui ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Active ESD device; Electrostatic discharge (ESD); Leakage current; Threshold voltage

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; HOT CARRIERS; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

ACTIVE ESD DEVICES; ELECTROSTATIC DISCHARGE (ESD);

ELECTROSTATIC DEVICES;

EID: 1842659014     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L33     Document Type: Article

References (7)

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