Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

Applied Surface Science

Volumn 226, Issue 4, 2004, Pages 387-392

  Liao, J X ^a   Liu, W M ^a   Xu, T ^a   Xue, Q J ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Carbon films; DLC; Ion implantation; Plasma

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RAMAN SPECTROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON FILMS; ION BEAM ASSISTED DEPOSITION (IBAD);

DIAMOND LIKE CARBON FILMS;

EID: 1842630587     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.10.039     Document Type: Article

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