Structural and electronic properties of the Sn/Si(1 1 1)-(2√3 × 2√3)R30° surface revised

Surface Science

Volumn 554, Issue 2-3, 2004, Pages 109-118

  Ottaviano, L ^a   Profeta, G ^a   Petaccia, L ^b   Nacci, C B ^a,c   Santucci, S ^a  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b SINCROTRONE TRIESTE   (Italy)

^c LABORATORIO TASC   (Italy)

Author keywords

Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.); Synchrotron radiation photoelectron spectroscopy; Tin

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SILICON; SINGLE CRYSTALS; SURFACE PHENOMENA; SYNCHROTRON RADIATION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

SCANNING TUNNELING SPECTROSCOPIES; SEMICONDUCTOR-SEMICONDUCTOR THIN FILM STRUCTURES; SURFACE ELECTRONIC PHENOMENA; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

TIN;

EID: 1842506047     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.02.019     Document Type: Article

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