메뉴 건너뛰기




Volumn 5256, Issue 1, 2003, Pages 638-645

Optical critical dimension (OCD) measurements for profile monitoring and control: Applications for mask inspection and fabrication

Author keywords

ADI; AEI; Normal incidence spectroscopic ellipsometry; OCD; Scatterometry

Indexed keywords

AFTER ETCH INSPECTION (AEI); OPTICAL CRITICAL DIMENSION (OCD);

EID: 1842474967     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (16)

References (4)
  • 1
    • 0036072995 scopus 로고    scopus 로고
    • Line-profile and critical dimension measurements using a normal incidence optical metrology system
    • Weidong Yang, Roger Lowe-Webb, Rahul Korlahalli, et al., Line-profile and critical dimension measurements using a normal incidence optical metrology system, Proc, IEEE/SEMI Adv. Semicond. Manuf. Conference, 119-124, 2002.
    • (2002) Proc, IEEE/SEMI Adv. Semicond. Manuf. Conference , pp. 119-124
    • Yang, W.1    Lowe-Webb, R.2    Korlahalli, R.3
  • 2
    • 0029307028 scopus 로고
    • Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach
    • M.G. Moharam, Drew A. Pommet, Eric B. Grann and T. K. Gaylord, Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: enhanced transmittance matrix approach, J. Opt. Soc. Am A, Vol. 12, No. 5 pp 1068-1076, 1995.
    • (1995) J. Opt. Soc. Am A , vol.12 , Issue.5 , pp. 1068-1076
    • Moharam, M.G.1    Pommet, D.A.2    Grann, E.B.3    Gaylord, T.K.4
  • 3
    • 1842442626 scopus 로고    scopus 로고
    • Existing and Envisioned Control Environment for Semiconductor Manufacturing
    • James Moyne, Enrique del Castillo, Arnon Max Hurwitz, eds., New York: CRC
    • James Moyne and Joe White, Existing and Envisioned Control Environment for Semiconductor Manufacturing, In: James Moyne, Enrique del Castillo, Arnon Max Hurwitz, eds. Run-to-Run Control in Semiconductor Manufacturing, New York: CRC, 2001, pp 115-124.
    • (2001) Run-to-run Control in Semiconductor Manufacturing , pp. 115-124
    • Moyne, J.1    White, J.2
  • 4
    • 0036030586 scopus 로고    scopus 로고
    • Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension [4689-133]
    • Holden, J. M.; Gubiotti, T.; McGaham, W. A.; Dusa, M. V.; Kiers, T., Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension [4689-133] Proc. SPIE 4689: 1110-1121, 2002
    • (2002) Proc. SPIE , vol.4689 , pp. 1110-1121
    • Holden, J.M.1    Gubiotti, T.2    McGaham, W.A.3    Dusa, M.V.4    Kiers, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.