Line-profile and critical dimension measurements using a normal incidence optical metrology system

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2002, Pages 119-124

  Yang, Weidong ^a   Lowe Webb, Roger ^a   Korlahalli, Rahul ^a   Zhuang, Vera ^a   Sasano, Hiroki ^b   Liu, Wei ^b   Mui, David ^b  

^a NANOMETRICS INC   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

CD; CD SEM; Diffraction; Optical critical dimension; Optical metrology; Process control

Indexed keywords

CORRELATION METHODS; DIFFRACTION GRATINGS; LIGHT MEASUREMENT; NONDESTRUCTIVE EXAMINATION; OPTICAL TESTING; PHOTOLITHOGRAPHY; PROCESS CONTROL; SCATTERING; SPECTROSCOPIC ANALYSIS;

CRITICAL DIMENSION MEASUREMENTS; LINE PROFILE MEASUREMENTS; NORMAL INCIDENCE OPTICAL METROLOGY SYSTEM; OPTICAL CRITICAL DIMENSION METROLOGY; OPTICAL WAVELENGTH LIGHT DIFFRACTION TECHNIQUE; PHOTORESIST GRATINGS; POLYSILICON GATE FILM STACK; SPECTROSCOPIC DIFFRACTION SIGNATURE; ZEROTH ORDER DIFFRACTION SIGNATURE;

INTEGRATED CIRCUIT TESTING;

EID: 0036072995     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2002.1001586     Document Type: Article

References (5)

1. Lithography
2. Diffraction analysis of dielectric surface-relief gratings
3. Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach
4. Normal incidence spectroscopic ellipsometry for critical dimension monitoring
5. Critical dimension and profile measurement by optical scatterometry for sub-0.15 μm advanced gate and shallow trench isolation structures