Growth and Characterization of Al2O3 Thin Films for the Buffer Insulator in Pt/SrBi2Nb2O9/Al 2O3/Si Ferroelectric Gate Oxide Structure

Metals and Materials International

Volumn 9, Issue 3, 2003, Pages 293-298

  Choi, Hoon Sang ^a   Lim, Geun Sik ^a   Lee, Jong Han ^a   Jang, You Min ^a   Yoo, Dong Chul ^b   Lee, Jeong Yong ^b   Choi, In Hoon ^a  

^a Korea University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Buffer layer; Ferroelectric; Memory window; MFIS structure

Indexed keywords

ALUMINA; ALUMINUM OXIDE; BISMUTH COMPOUNDS; BUFFER LAYERS; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRIC RAM; FERROELECTRICITY; GATES (TRANSISTOR); NIOBIUM COMPOUNDS; OXIDE FILMS; PEROVSKITE; PLATINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRONTIUM COMPOUNDS; SUBSTRATES;

DEPOSITION CONDITIONS; FERROELECTRIC GATE; INTERMEDIATE LAYERS; MAGNETRON SPUTTERING METHOD; MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; MFIS STRUCTURE; NONDESTRUCTIVE READ-OUT;

SILICON;

EID: 1842420402     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027049     Document Type: Article

References (14)

1. J. F. Scott, L. Kammerdiner, M. Parris, S. Traynor, V. Ottanbachar, A. Shawbketh, and W. C. Oliver, J. Appl. Phys. 64, 787 (1988).
2. J. T. Evans and R. Womack, IEEE J. Solid State Circuits 23, 610 (1988).
3. H. Ishiwara, Jpn. J. Appl. Phys. 32, 442 (1993).
4. S. Sinharoy, H. Bobay, D. R. Lampe, and M. H. Francombe, J. Vac. Sci. Tech. A 10, 1554 (1992).
5. C. A. Paz de Araujo, J. D. Cuchlaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature 374, 627 (1995).
6. E. Tokumitsu, K. Itani, B. K. Moon, and H. Ishiwara, Jpn. J. Appl. Phys. 34, 5202 (1995).
7. M. Lim and T. S. Kalkur, Integr. Ferroelectric 14, 247 (1997).
8. H. Sugiyama, T. Nakaiso, Y. Adachi, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys. 39, 2131 (2000).
9. D. S. Shin, H. N. Lee, Y. T. Kim, I. H. Choi, and B. H. Kim, Jpn. J. Appl. Phys. 37, 4373 (1998).
10. H. S. Choi, E. H. Kim, I. H. Choi, Y. T. Kim, J. H. Choi, and J. Y. Lee, Thin Solid Films 388, 226 (2001).
11. S. K. Kang and H. Ishiwara, Jpn. J. Appl. Phys. 41, 2094 (2002).
12. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
13. T. Seo, Y. Jeon, and S. Yoon, Metals and Materials Int. 7, 631 (2001)
14. H. S. Choi, Y. T. Kim, S. Kim, and I. Choi, Jpn. J. Appl. Phys. 40, 2940 (2001).