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Volumn 237-239, Issue 1-4, 2002, Pages 1716-1719

Experimental and numerical study of the VGF growth of CdTe crystal

Author keywords

A1. Compputer simulation; A1. Convection; A1. Interfaces; A2. Growth from melt; B2. Semiconducting cadmium compounds

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ETCHING; HEAT CONVECTION; INTERFACES (MATERIALS); SEMICONDUCTING CADMIUM TELLURIDE;

EID: 18344415512     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02342-9     Document Type: Article
Times cited : (11)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.