|
Volumn 237-239, Issue 1-4, 2002, Pages 1716-1719
|
Experimental and numerical study of the VGF growth of CdTe crystal
|
Author keywords
A1. Compputer simulation; A1. Convection; A1. Interfaces; A2. Growth from melt; B2. Semiconducting cadmium compounds
|
Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
COMPUTER SIMULATION;
ETCHING;
HEAT CONVECTION;
INTERFACES (MATERIALS);
SEMICONDUCTING CADMIUM TELLURIDE;
VERTICAL GRADIENT FREEZING (VGF) GROWTH;
CRYSTAL GROWTH FROM MELT;
|
EID: 18344415512
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02342-9 Document Type: Article |
Times cited : (11)
|
References (16)
|