Transient analysis of LE-VGF growth of compound semiconductors

International Journal of Numerical Methods for Heat and Fluid Flow

Volumn 8, Issue 8, 1998, Pages 956-968

  Okano, Yasunori ^a   Sakai, Susumu ^a   Morita, Takahiro ^a   Shimizu, Jun ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DEFLECTION (STRUCTURES); FINITE ELEMENT METHOD; FREEZING; SINGLE CRYSTALS; SOLIDIFICATION; STOICHIOMETRY; THERMAL CONDUCTIVITY; VAPORIZATION; VISCOSITY; BOUNDARY CONDITIONS; CRYSTAL GROWTH FROM MELT; FINITE DIFFERENCE METHOD; TRANSIENTS;

CARBON CRUCIBLE HOLDERS; COMPOUND SEMICONDUCTORS; GRADIENT FREEZING; TRANSIENT ANALYSIS; CRYSTAL GROWTH RATE;

SEMICONDUCTOR GROWTH; SEMICONDUCTING INDIUM PHOSPHIDE;

CONDUCTION; HEAT FLUX; LIQUID FLOW; SEMICONDUCTOR; TRANSIENT;

EID: 0032316274     PISSN: 09615539     EISSN: None     Source Type: Journal    
DOI: 10.1108/09615539810241141     Document Type: Article

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