Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1121-1124

  Chida, Yoshihiko ^a   Kondo, Michio ^b   Matsuda, Akihisa ^b  

^a Central Glass Co Ltd   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FILM GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

FIELD EFFECT MOBILITY; SURFACE REACTION MODEL;

THIN FILM TRANSISTORS;

EID: 0030563264     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00060-9     Document Type: Article

References (4)

1. G. Ganguly and A. Matsuda, Phys. Rev, B47 (1993) 3661.
2. Y. Chida, M. Kondo, G. Ganguly and A. Matsuda, Mater. Res. Soc. Symp. Proc. 336 (1994) 817.
3. M. Kondo, Y. Chida and A. Matsuda, Proc. Int. Workshop on AM-LCD, Tokyo (1994) 112.
4. H. Matsuura, A. Matsuda, H. Okushi, T. Okuno and K. Tanaka, Appl. Phys. Lett. 45 (1984) 433.