Effects of regularity of honeycomb hollows formed by the anodization of GaAs substrates on the molecular-beam epitaxial growth of InAs dots

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1049-1052

  Morishita, Yoshitaka ^a   Sunagawa, Jun ^a   Yumoto, Yuji ^a   Kawai, Shingo ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds

Indexed keywords

ANODIC OXIDATION; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SOLUTIONS; STATISTICAL METHODS; SUBSTRATES;

HONEYCOMB HOLLOWS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18244424867     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00986-1     Document Type: Conference Paper

References (16)