Spectroscopic studies of TM/Si and TM/SiO 2 interfaces

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 689-693

  Jarrige, I ^a   Jonnard, P ^a   Holliger, P ^b   Nguyen, T P ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b CEA GRENOBLE   (France)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

Metal Si interfaces; Metal SiO 2 interfaces; Secondary ion mass spectrometry; X ray emission spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ARGON; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); ION BOMBARDMENT; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

X-RAY EMISSION SPECTROSCOPY (EXES);

SILICA;

EID: 18144446351     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00071-0     Document Type: Conference Paper

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