TiN structural modifications induced by bias voltage in a new dynamic controlled magnetron sputtering apparatus

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175, Issue 177, 2001, Pages 626-629

  Tentardini, E K ^a   Blando, E ^a   Hubler R ^a  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Bias sputtering; Hardness; Magnetron sputtering; QMG; TiN thin films

Indexed keywords

CHEMICAL MODIFICATION; ENERGY DISPERSIVE SPECTROSCOPY; MAGNETRON SPUTTERING; MICROHARDNESS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TITANIUM NITRIDE;

BIAS SPUTTERING; QUADRUPOLE RESIDUAL GAS ANALYZERS;

PROTECTIVE COATINGS;

EID: 18144442172     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00652-2     Document Type: Article

References (13)

1. Fundamental mechanisms of titanium nitride formation by DC magnetron sputtering