A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: Effect of beryllium

Solid State Communications

Volumn 134, Issue 10, 2005, Pages 677-681

  Gu, Y ^a,c   Kuskovsky, Igor L ^a   Robinson, R D ^a   Herman, I P ^a   Neumark, G F ^a   Zhou, X ^b   Guo, S P ^b   Munoz, M ^b   Tamargo, M C ^b  

^a Columbia University ^*  (United States)

^b CITY COLLEGE OF NEW YORK   (United States)

^c Northwestern University   (United States)

Author keywords

A. Beryllium compounds; A. Cadmium compounds; A. II VI semiconductors; A. Semiconductor quantum dots; A. Zinc compounds; D. Raman spectra; E. Photoluminescence

Indexed keywords

BERYLLIUM COMPOUNDS; ELECTRIC INSULATORS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SELF ASSEMBLY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

II-VI SEMICONDUCTORS; OPTICALLY ACTIVE MATERIALS; PHOTOLUMINESCENCE EXCITATION (PLE); QUANTUM SIZE EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18144398617     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.03.014     Document Type: Article

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