Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 733-736

  Zhou, X ^a   Tamargo, M C ^a   Guo, S P ^b   Chen, Y C ^c  

^a CITY COLLEGE OF NEW YORK   (United States)

^b EMCORE CORPORATION   (United States)

^c CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

Decay time; Molecular beam epitaxy (MBE); Quantum dots; Secondary ion mass spectrometry (SIMS); Time resolved photoluminescence

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

TIME-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042266751     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0061-y     Document Type: Conference Paper

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