Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1635-1639

  Guo, S P ^a,d   Zhou, X ^a   Maksimov, O ^a   Tamargo, M C ^a   Chi, C ^b   Couzis, A ^b   Maldarelli, C ^b   Kuskovsky, Igor L ^c   Neumark, G F ^c  

^a CITY COLLEGE OF NEW YORK   (United States)

^b City College of New York   (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

^d EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BERYLLIUM; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACE STRUCTURE;

BAND-EDGE PHOTOLUMINESCENCE; CADMIUM SELENIDE; CRYSTALLINE QUALITY; OPTICAL QUALITY; SURFACE RECONSTRUCTION; ZINC BERYLLIUM SELENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035535371     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1388209     Document Type: Conference Paper

References (16)

1. D. Leonard, M. Krishnamurthy, S. Fafard, J. M. Merz, and P. M. Petroff, J. Vac. Sci. Technol. B 12, 1063 (1994).
2. A. Madhukar, Q. Xie, P. Chen, and A. Konkar, Appl. Phys. Lett. 64, 2727 (1994).
3. S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff, Appl. Phys. Lett. 65, 1388 (1994).
4. A. Kurtenbach, E. Eberl, and T. Shitara, Appl. Phys. Lett. 66, 361 (1995).
5. F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gosele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Y. Meltser, P. S. Kop'ev, and Z. Alferov, Appl. Phys. Lett. 67, 656 (1995).
6. S. H. Xin, P. D. Wang, A. Yin, C. Kim, M. Dobrowolska, J. L. Merz, and J. K. Furdyna, Appl. Phys. Lett. 69, 3884 (1996).
7. F. Flack, V. Nikitin, P. A. Crowell, J. Shi, J. Levy, N. Samarth, and D. D. Awschalom, Phys. Rev. B 54, R17312 (1996).
8. D. Li and M. D. Pashley, J. Vac. Sci. Technol. B 12, 2547 (1994).
9. F. Fischer, Th. Litz, H. J. Lugauer, U. Zehnder, Th. Gerhard, W. Ossau, A. Waag, and G. Landwehr, J. Cryst. Growth 175/176, 619 (1997).
10. F. Fischer, M. Keller, T. Gerhard, T. Behr, T. Litz, H. J. Lugauer, M. Keim, G. Reuscher, T. Baron, A. Waag, and G. Landwehr, J. Appl. Phys. 84, 1650 (1998).
11. S. P. Guo, Y. Luo, W. Lin, O. Maksimov, M. C. Tamargo, I. Kuskovsky, C. Tian, and G. F. Neumark, J. Cryst. Growth 208, 205 (2000).
12. A. García and J. E. Northrup, J. Vac. Sci. Technol. B 12, 2678 (1994).
13. H. H. Farrell, M. C. Tamargo, and S. M. Shibli, J. Vac. Sci. Technol. B 8, 884 (1990).
14. C. C. Chu, T. B. Ng, J. Han, G. C. Hua, R. L. Gunshor, E. Ho, E. L. Warlick, L. A. Kolodziejski, and A. V. Nurmikko, Appl. Phys. Lett. 69, 602 (1996).
15. M. Keim, M. Korn, J. Seufert, G. Bacher, A. Forchel, G. Landwehr, S. Ivanov, S. Sorokin, A. A. Sitnikova, T. V. Shubina, A. Toropov, and A. Waag, J. Appl. Phys. 88, 7051 (2000).
16. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg, Appl. Phys. Lett. 76, 418 (2000).