Silicon single atom steps as AFM height standards

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue 1, 2001, Pages 157-168

  Dixson, Ronald ^a   Orji, Ndubuisi G ^a   Fu, Joseph ^a   Tsai, Vincent ^a   Williams, Ellen D ^b   Kacker, Raghu ^a   Vorburger, Theodore ^a   Edwards, Hal ^c   Cook, Debra ^d   West, Paul ^e   Nyffenegger, Ralph ^f  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d Digital Instruments   (United States)

^e ThermoMicroscopes   (United States)

^f Park Scientific Instruments   (United States)

Author keywords

AFM; Atomic steps; Metrology; Step height

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; SURFACE ROUGHNESS;

STEP HEIGHT;

SEMICONDUCTING SILICON;

EID: 17944383048     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436739     Document Type: Article

References (15)

1. The study of silicon stepped surfaces as atomic force microscope calibration standards with a calibrated AFM at NIST
2. Algorithms for calculating single atom step heights
3. Accurate dimensional metrology with atomic force microscopy
4. Dimensional metrology with the NIST calibrated atomic force microscope
5. Improving step height and pitch measurements using the calibrated atomic force microscope
6. Measurement of pitch and width samples with the NIST calibrated atomic force microscope
7. Pitch and step height measurements using the calibrated atomic force microscope
8. Design of an atomic force microscope with interferometric position control
9. CODATA recommended values of the fundamental physical constants
10. Conformal oxides on silicon surfaces
11. Surface phase separation of vicinal Si (111)
12. Long-range coherence of macroscopic phase separation of steps on vicinal Si(111)