SCOPUS 정보 검색 플랫폼

Synthetic Metals

Volumn 77, Issue 1-3, 1996, Pages 35-38

Transport studies in C60 and C60/C70 thin films using metal-insulator-semiconductor field-effect transistors

(4) Jarrett, C P a Pichler, K b Newbould, R a Friend, R H a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b Cambridge Display Technology Ltd (United Kingdom)

Author keywords

Films; Fullerene; MISFETs; Transistors; Transport studies

Indexed keywords

ANNEALING; COMPOSITION; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); MISFET DEVICES; OXYGEN; PHASE TRANSITIONS; THERMODYNAMIC STABILITY; THIN FILMS; TRANSPORT PROPERTIES;

ELEVATED TEMPERATURE; FIELD EFFECT MOBILITY; FULLERENE INSULATOR INTERFACE;

FULLERENES;

EID: 0030082442 PISSN: 03796779 EISSN: None Source Type: Journal
DOI: 10.1016/0379-6779(96)80052-X Document Type: Article

Times cited : (53)

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