MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving-voltages fabricated by selective-area MOCVD

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 797-799

  Lammert, R M ^a   Smith, G M ^a,b   Hughes, J S ^a,c   Osowski, M L ^a   Jones, A M ^a   Coleman, J J ^a,c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Advanced Technology Materials Inc   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; ELECTRIC CURRENTS; HETEROJUNCTIONS; LIGHT MODULATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; OPTICAL FIBERS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS; INJECTION CURRENT HEATING; RIDGE WAVEGUIDE; SELECTIVE AREA METALLORGANIC CHEMICAL VAPOR DEPOSITION; THREE STEP SELECTIVE AREA GROWTH PROCESS;

SEMICONDUCTOR LASERS;

EID: 0030170202     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502098     Document Type: Article

References (9)

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