Highly efficient radiative recombination of electron-hole pairs localized at compound semiconductor quantum dots embedded in Si

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 354-357

  Jo, M ^a   Yasuhara, N ^a   Ishida, K ^a   Kawamoto, K ^a   Fukatsu, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Compound semiconductor; Quantum dots; Silicon

Indexed keywords

BAND STRUCTURE; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; HOLE MOBILITY; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

COMPOUND SEMICONDUCTORS; CONDUCTION BANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642314091     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.040     Document Type: Conference Paper

References (4)

1. Jo M., Ishida K., Kawamoto K., Fukatsu S. Phys. Stat. Sol. C. 4:2003;1117.
2. Cyrlin G.E., Petrov V.N., Dubrovskii V.G., Samsonenko Yu.B., Polyakov N.K., Golubok A.O., Masalov S.A., Komyak N.I., Ustinov V.M., Egorov A.Yu., Kovsh A.R., Maximov M.V., Tsatsul'nikov A.F., Volovik B.V., Zhukov A.E., Kop'ev P.S., Ledentsov N.N., Alferov Zh.I., Bimberg D. Semiconductors. 33:1999;972.
3. Zakharov N.D., Werner P., Gosele U., Heitz R., Bimberg D., Ledentsov N.N., Ustinov V.M., Volovik B.V., Alferov Zh.I., Polyakov N.K., Petrov V.N., Egorov V.A., Cirlin G.E. Appl. Phys. Lett. 76:2000;2677.
4. Van de Walle C.G. Phys. Rev. B 39:1989;1871.