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Materials Science and Engineering: B

Volumn 119, Issue 2, 2005, Pages 202-205

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

(9) Lin, T K a Chang, S J a Su, Y K a Chiou, Y Z b Wang, C K a Chang, S P a Chang, C M a Tang, J J b Huang, B R c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Homoepitaxial; MBE; MSM photodetector; ZnSe

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FAST FOURIER TRANSFORMS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; ZINC COMPOUNDS;

FREQUENCY NOISE SPECTRA; HOMOEPITAXIAL ZNSE METAL-SEMICONDUCTOR-METAL (MSM) PHOTOCONDUCTORS; NOISE EQUIVALENT POWER (NEP); ZNSE;

PHOTODETECTORS;

EID: 17844409567 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.03.002 Document Type: Article

Times cited : (31)

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