Experimental investigation of noise sources in silicon carbide Schottky barriers

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 1996, Pages 539-542

  Anghel, L ^a   Ouisse, T ^a   Billon, T ^a   Lassagne, P ^a   Jaussaud, C ^a  

^a LPCS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; TITANIUM;

LOW FREQUENCY NOISE; MOBILITY FLUCTUATIONS;

SCHOTTKY BARRIER DIODES;

EID: 0030392094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)