Stress in poly-SiC films grown by low pressure CVD

Materials Science Forum

Volumn 347, Issue , 2000, Pages 477-482

  Rodriguez Viejo J ^a   Hurtos E ^a   Kressmann, R ^b   Clavaguera Mora, M T ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL IMPURITIES; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

GRAIN BOUNDARY RELAXATION MODELS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LP-CVD);

SILICON CARBIDE;

EID: 17744416909     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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