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Volumn 83, Issue 16, 1999, Pages 3210-3213

Si(100)-(2×1) etching with fluorine: Planar removal versus three dimensional pitting

Author keywords

[No Author keywords available]

Indexed keywords


EID: 17744415597     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.3210     Document Type: Article
Times cited : (17)

References (23)
  • 3
    • 0042091858 scopus 로고    scopus 로고
    • Z. Y. Zhang and M. G. Lagally, Morphological Organizations During Epitaxial Growth and Removal (World Scientific, Singapore,)
    • J. H. Weaver and C. M. Aldao, in Spontaneous Halogen Etching of Si, Z. Y. Zhang and M. G. Lagally, Morphological Organizations During Epitaxial Growth and Removal (World Scientific, Singapore, 1999), pp. 453–484.
    • (1999) Spontaneous Halogen Etching of Si , pp. 453-484
    • Weaver, J.H.1    Aldao, C.M.2
  • 22


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.