Effects of illumination on positron lifetime of electron irradiated n-type 6H-SiC

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 126-128

  Redmann, F ^a   Kawasuso, A ^a,b   Petters, K ^a   Krause Rehberg, R ^a   Itoh, H ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Annealing; Positron annihilation; Radiation defect; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON IRRADIATION; MONOCHROMATORS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; THERMAL EFFECTS;

ILLUMINATION EFFECT; OPTICAL ILLUMINATION; POSITRON LIFETIME; THRESHOLD PHOTON ENERGY; VACANCY TYPE DEFECTS;

SILICON CARBIDE;

EID: 0034997061     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.126     Document Type: Conference Paper

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