Electrical characteristics of Al/a-C:H/n-Si diodes using CH4 and CH4/CF4 as the gas source

Vacuum

Volumn 47, Issue 3, 1996, Pages 225-227

  Alves, M A R ^a   Braga, E S ^a   Frejlich, J ^a   Cescato, L ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; FLUORINE COMPOUNDS; METHANE; MIS DEVICES; SILICON; VOLTAGE MEASUREMENT;

COMPRESSIVE STRESS; FILM THICKNESS; GAS MIXTURE; HYDROGENATED AMORPHOUS CARBON; REVERSE BREAKDOWN VOLTAGE; THERMAL DEPENDENCE;

SEMICONDUCTOR DIODES;

EID: 0030105402     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(95)00220-0     Document Type: Article

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