Short-period (Si14/Si0.75Ge0.25)20 superlattices for the growth of high-quality Si0.75Ge0.25 alloy layers

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 193-198

  Rahman, M M ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; STRAIN; SURFACE ROUGHNESS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

BUFFER LAYERS; SILICON GERMANIUM ALLOY LAYERS; STRAINED LAYERS;

SUPERLATTICES;

EID: 0242661428     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. J.H. Van der Merwe, IEEE 81, 1687 (1962).
2. R. People, J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
3. E. Kasper, Surf. Sci. 174, 630 (1986).
4. E.A. Fitzgerald, Y.H. Xie, M.L. Green, D. Bransen, A.R. Kortan, J. Michel, Y.J. Mill, and B.E. Weier, Appl. Phys. Lett. 59, 811 (1991).
5. P.J. Wang, B.S. Meyerson, K. Ismail, F.F. Fang, and J. Nocera, Mater. Res. Soc. Symp. Proc. 220, 403 (1991).
6. J.M. Hartmann, B. Gallas, J.J. Harris, and B.A. Joyace, J. Appl. Phys. 86, 845 (1999).
7. M.M. Rahman, H. Matada, T. Tambo, and C. Tatsuyama, J. Appl. Phys. 90, 202 (2001).
8. T. Obata, K. Kameda, T. Tambo, and C. Tatsuyama, J. Appl. Phys. 81, 199 (1997).
9. M.A. Lutz, R.A. Feenstra, F.K. LeGaues, P.M. Moomey, and J.O. Chu, App. Phys. Lett. 66, 724 (1995).
10. E.A. Fitzgeral, Y.H. Xie, D. Monroe, P.J. Silverman, J.M. Kou, A.R. Kortan, F.A. Thiel, and B.E. Weir, J. Vac. Sci. Technol. B10, 1807 (1992).