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Volumn , Issue , 2004, Pages 273-276

Impact of thermal overload operation on wirebond and metallization reliability in smart power devices

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FAILURE; OVERLOADS; POWER DEVICES; POWER DISSIPATION;

EID: 17644402837     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (29)

References (8)
  • 1
    • 17644408700 scopus 로고    scopus 로고
    • Reliability characterization of LDMOS transistors submitted to multiple energy discharges
    • Cat.Nr.00CH37094C
    • M. Bosc et al, "Reliability Characterization of LDMOS Transistors submitted to Multiple Energy Discharges", ISPSD'2000 Proceedings, Cat.Nr.00CH37094C
    • ISPSD'2000 Proceedings
    • Bosc, M.1
  • 2
    • 17644395265 scopus 로고    scopus 로고
    • Fast thermal fatigue on top metal layer of power devices
    • Elsevier Science Ltd
    • S. Russo et al, "Fast thermal fatigue on top metal layer of power devices", Microelectronics Reliability 42 (2002), pp 1617-1622, Elsevier Science Ltd
    • (2002) Microelectronics Reliability , vol.42 , pp. 1617-1622
    • Russo, S.1
  • 3
    • 17644395266 scopus 로고    scopus 로고
    • Reliability of power transistors against application driven temperature swings
    • Elsevier Science Ltd
    • S. Gopalan et al, "Reliability of power transistors against application driven temperature swings", Microelectronics Reliability (2002), Elsevier Science Ltd
    • (2002) Microelectronics Reliability
    • Gopalan, S.1
  • 4
    • 84885861911 scopus 로고    scopus 로고
    • Thermal destruction testing: An indirect approach to a simple dynamic thermal model of smart power switches
    • Proc. p.236 ff
    • M. Glavanovics, H. Zitta, "Thermal Destruction Testing: an Indirect Approach to a Simple Dynamic Thermal Model of Smart Power Switches", ESSCIRC 2001, Proc. p.236 ff.
    • ESSCIRC 2001
    • Glavanovics, M.1    Zitta, H.2
  • 6
    • 0141942912 scopus 로고    scopus 로고
    • Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: Experiments and modeling
    • H.V. Nguyen et al, "Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling", Microelectronics reliability Vol.42, No.9-11, pp.1415-1420, 2002
    • (2002) Microelectronics Reliability , vol.42 , Issue.9-11 , pp. 1415-1420
    • Nguyen, H.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.