SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 365-370

Strain in silicon below Si3N4 stripes, comparison between SUPREM IV calculation and TEM/CBED measurements

(7) Armigliato, A a Balboni, R a Frabboni, S b Tixier, A c,d Carnevale, G P c Colpani, P c Marmiroli, A c

a CNR (Italy)

b UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

c STMICROELECTRONICS (Italy)

d Institut Superieur de l'Electronique et du Numerique (France)

Author keywords

Electron Diffraction; Process Simulation; Silicon Nitride; Strain; Stress

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; ELASTIC MODULI; ELECTRON DIFFRACTION; MASKS; SILICON WAFERS; STRAIN; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; DEFECTS; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; THERMOOXIDATION;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED);

SILICON NITRIDE; SILICON WAFERS;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); ISOLATION STRUCTURES; LATTICE STRAIN; PAD OXIDES; PROCESS SIMULATIONS; SILICON NITRIDE FILM; STRESS TENSORS;

EID: 4243220258 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Article

Times cited : (2)

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