Incorporation, diffusion and agglomeration of carbon in silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 189-194

  Laveant P ^a   Werner, P ^a   Gerth, G ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Agglomeration; Carbon; Clusters; Diffusion; MBE; Molecular beam epitaxy; SiC

Indexed keywords

AGGLOMERATION; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; OXYGEN; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TWINNING;

CARBON RICH SILICON LAYERS; CLUSTERS; FRANK-TURNBULL MECHANISM; ISOELECTRICAL IMPURITY; VACANCY DIFFUSING DOPANT;

CARBON;

EID: 17444443021     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)