RF equivalent-circuit model of interconnect bends based on s-parameter measurements

Microwave and Optical Technology Letters

Volumn 45, Issue 2, 2005, Pages 170-173

  Shi, Xiaomeng ^a   Ma, Jianguo ^a   Ong, Beng Hwee ^a   Yeo, Kiat Sang ^a   Do, Manh Anh ^a   Li, Erping ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Equivalent circuits; Interconnect models; Scattering parameters measurement

Indexed keywords

INTERCONNECT BENDS; INTERCONNECT MODELS; S-PARAMETER MEASUREMENTS; SCATTERING PARAMETERS MEASUREMENTS;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FABRICATION; MATHEMATICAL MODELS; MICROWAVES; NATURAL FREQUENCIES; OPTICAL INTERCONNECTS; PARAMETER ESTIMATION; SCATTERING PARAMETERS; SUBSTRATES;

EQUIVALENT CIRCUITS;

EID: 17444428113     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.20760     Document Type: Article

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