Silicon surface and interface issues for nanoelectronics

Electrochemical Society Interface

Volumn 14, Issue 1, 2005, Pages 31-33

  Chabal, Yves J ^a,b   Feldman, Leonard C ^c,d  

^a RUTGERS UNIVERSITY   (United States)

^b Laboratory for Surface Modification   (United States)

^c Department of Physics ^*

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRIC LAYER; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS (ITRS); NANOELECTRONICS;

DIELECTRIC FILMS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OXIDATION; PARAMAGNETIC RESONANCE; PERMITTIVITY; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 17444415281     PISSN: 10648208     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

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