Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies

Journal of Applied Physics

Volumn 90, Issue 2, 2001, Pages 837-842

  Nashima, S ^a   Morikawa, O ^a   Takata, K ^a   Hangyo, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035878862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1376673     Document Type: Article

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