Dielectric properties of A - And B -site-doped BaTiO3 (I):La - And Al -doped solid solutions

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Bobade, S M ^a   Gulwade, D D ^a   Kulkarni, A R ^a   Gopalan, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; DIELECTRIC SPECTROSCOPY; FREQUENCY DISPERSION; ROOM TEMPERATURE; RELAXOR BEHAVIOR;

ALUMINUM; DATA REDUCTION; DIELECTRIC PROPERTIES; PERMITTIVITY; SEMICONDUCTOR DOPING; SOLID SOLUTIONS; SYNTHESIS (CHEMICAL); TEMPERATURE DISTRIBUTION; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS; CONCENTRATION (PROCESS); GALLIUM; PHASE TRANSITIONS;

BARIUM;

EID: 17444402443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1879074     Document Type: Article

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