Efficient long wavelength AlGalnAs vertical-cavity surface-emitting lasers for coarse WDM applications over multimode fibre

Electronics Letters

Volumn 40, Issue 19, 2004, Pages 1184-1185

  Cheng, J ^a   Shieh, C L ^a   Huang, X D ^a   Liu, G L ^a   Murty, M V R ^a   Lin, C C ^a   Xu, D X ^a  

^a E20 Communications Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; LOCAL AREA NETWORKS; MIRRORS; MODULATION; MULTIMODE FIBERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS; WAVELENGTH DIVISION MULTIPLEXING;

BRAGG REFLECTORS (BR); INTRACAVITY CONTACTS; STORAGE AREA NETWORKS (SAN); VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

LASERS;

EID: 4944241534     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045810     Document Type: Article

References (4)

1. Riechert, H., Geelhaar, L., Ebbinghaus, G., Lima, A., Ramakrishnan, A., and Steinle, G.: '1.3 μm VCSELs for fiber-optical communication systems'. 2003 InP Compound Semiconductor Workshop, Santa Barbara, CA, USA, March 2003
2. Shau, R., Ortsiefer, M., Rosskopf, J., Bohm, G., Kohler, F., and Amann, M.C.: 'Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature', Electron. Lett., 2001, 37, (21), pp. 1295-1296
3. Nishiyama, N., Caneau, C., Guryanov, G., Liu, X.S., Hu, M., and Zah, C.E.: 'High-efficiency long-wavelength VCSEL on InP grown by MOCVD', Electron. Lett., 2003, 39, (5), pp. 437-439
4. Cheng, J., Shieh, C.L., Liu, G.L., Murty, M.VR., Lin, C.C., Huang, X.D., Jiang, W.B., and Lee, H.C.: '10Gb/s transmission using efficient 1.31 μm AlInGaAs VCSELs with good high temperature performance'. 2003 Lasers and Electrooptics Society Annual Mtg, 26-30 October 2003, Paper post-deadline paper PD 2.5