Modeling and experimental data using a new high rate ICP tool for dry etching 200 mm EPL masks

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 887-894

  Dauksher, W J ^a   Clemens, S B ^a   Resnick, D J ^a   Smith, K H ^a   Mangat, P J S ^a   Rauf, S ^b   Stout, P ^b   Ventzek, P L G ^b   Ashraf, H ^c   Lea, L ^c   Hall, S ^c   Hopkins, J ^c   Chambers, A ^c  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c Surface Technology Systems plc   (United Kingdom)

Author keywords

Deep silicon etch modeling; EPL masks; PREVAIL; SCALPEL

Indexed keywords

COMPUTER SIMULATION; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; SILICON;

ELECTRON PROJECTION LITHOGRAPHY (EPL);

PHOTOLITHOGRAPHY;

EID: 17344379034     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00568-3     Document Type: Article

References (5)