Modeling and development of a deep silicon etch process for 200 mm election projection lithography mask fabrication

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2921-2925

  Dauksher, W J ^a   Clemens, S B ^a   Resnick, D J ^a   Smith, K H ^a   Mangat, P J S ^a   Rauf, S ^b   Ventzek, P L G ^b   Ashraf, H ^c   Lea, L ^c   Hall, S ^c   Johnston, I R ^c   Hopkins, J ^c   Chambers, A ^c   Bhardwaj, J K ^d  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c Surface Technology Systems Plc   (United Kingdom)

^d Scion Photonics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ETCHING; MASKS; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE;

BOSCH ETCH PROCESS; ELECTRON PROJECTION LITHOGRAPHY; PROJECTION EXPOSURE WITH VARIABLE AXIS IMMERSION LENSES; TETRAETHYL ORTHOSILICATE;

SEMICONDUCTING SILICON;

EID: 0000367079     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1420574     Document Type: Article

References (6)

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