Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Journal of Materials Science

Volumn 31, Issue 9, 1996, Pages 2291-2299

  Kassner, M E ^a   Weber, F J ^a   Koike, J ^b   Rosen, R S ^c  

^a Oregon State University   (United States)

^b TOHOKU UNIVERSITY   (Japan)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); MOLYBDENUM; RESIDUAL STRESSES; STRAIN; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COMPRESSIVE STRAINS; TENSILE STRESSES;

OPTICAL MULTILAYERS;

EID: 0030145308     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01152937     Document Type: Article

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