In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001)

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 684-687

  Ramil, A Montaigne ^a   Schmidegg, K ^a   Bonanni, A ^a   Sitter, H ^a   Stifter, D ^b   Shunfeng, Li ^c   As, D J ^c   Lischka, K ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b Upper Austrian Research GmbH   (Austria)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Cubic GaN; Ellipsometry; Metalorganic chemical vapor deposition; On line monitoring

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONITORING; ONLINE SYSTEMS; SPECTROSCOPIC ANALYSIS;

CUBIC GAN; ON LINE MONITORING; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 17144438656     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.036     Document Type: Conference Paper

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