Deposition of titanium oxide films with high dielectric constants on silicon by an ion beam assist deposition technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 718-723

  Yokota, K ^a   Nakamura, K ^a   Sasakawa, T ^a   Kamatani, T ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

High dielectric; Ion mixing; Titanium; Titanium dioxide

Indexed keywords

COMPOSITION EFFECTS; ELECTRON BEAMS; ION BEAM ASSISTED DEPOSITION; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TITANIUM DIOXIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM EVAPORATOR; ION BEAM SOURCE;

THIN FILMS;

EID: 0035246469     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.718     Document Type: Article

References (35)