An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 99-102

  Masuda, S ^a   Hirose, T ^a   Takahashi, T ^a   Nishi, M ^a   Yokokawa, S ^a   Iijima, S ^a   Ono, K ^a   Hara, N ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Distributed amplifiers; Flip chip; InP HEMT; Inverted microstrip line

Indexed keywords

ASSEMBLY; BANDWIDTH; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; LIGHT TRANSMISSION; MICROSTRIP LINES; SEMICONDUCTING INDIUM PHOSPHIDE;

DISTRIBUTED AMPLIFIERS;

LIGHT AMPLIFIERS;

EID: 0036438401     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Kimura, et al., "Loss-compensated distributed baseband amplifier IC's for optical transmission systems," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1688-1693, 1996.
2. Y. Baeyens, et al., "InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers," 2001 IEEE GaAs IC Symp., pp. 125-128, 2001.
3. S. Masuda, et al., "A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers," 2001 IEEE GaAs IC Symp., pp. 118-121, 2001.
4. M. Shigematsu, et al., "A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs," IEEE J. Solid-State Circuits, vol. 36, pp. 1309-1313, 2001.
5. S. Aoki, et al., "A flip chip bonding technology using gold pillars for millimeter-wave applications," IEEE MTT-S Digest, pp. 731-734, 1997.