Change in temperature coefficient of resistance of heavily doped polysilicon resistors caused by electrical trimming

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4209-4215

  Kato, Kotaro ^a   Ono, Terukazu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Boundary layer; Electrical trimming; Heavily doped polysilicon resistor; Melting segregation model; Temperature coefficient of resistance

Indexed keywords

ELECTRICAL TRIMMING; HEAVILY DOPED POLYSILICON RESISTOR; MELTING SEGREGATION MODE; TEMPERATURE COEFFICIENT OF RESISTANCE;

BOUNDARY LAYERS; MODELS; RESISTORS; TEMPERATURE DISTRIBUTION; TRIMMING;

SEMICONDUCTING SILICON;

EID: 0030205743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4209     Document Type: Article

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