All- Mg B2 tunnel junctions with aluminum nitride barriers

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Shimakage, Hisashi ^a   Tsujimoto, Kazuya ^a   Wang, Zhen ^a   Tonouchi, Masayoshi ^b  

^a National Institute of Information and Communications Technology   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; INTERMETALLICS; JOSEPHSON JUNCTION DEVICES; REACTIVE ION ETCHING; SAPPHIRE; THICKNESS MEASUREMENT;

COUNTERELECTRODES; GAP ENERGY; GAP VOLTAGES; JOSEPHSON TUNNELLING CURRENTS;

TUNNEL JUNCTIONS;

EID: 17044381332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868871     Document Type: Article

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