Stress-induced generation of thermal donors in near-surface layer of Czochralski grown silicon

Electron Technology (Warsaw)

Volumn 29, Issue 2-3, 1996, Pages 210-212

  Misiuk, A ^a   Jung, W ^a   Wroblewski, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; STRESSES;

THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0030418957     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)