Novel aspects of oxygen diffusion in silicon

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 5, 1996, Pages 347-353

  Binns, M J ^a   Londos, C A ^a   McQuaid, S A ^a   Newman, R C ^a   Semaltianos, N G ^a   Tucker, J H ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; HYDROGEN; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SILICA;

CLUSTERS; DONOR FORMATION; HYDROGEN IMPURITIES; INTERSTITIAL OXYGEN ATOMS; OXYGEN DIFFUSION; OXYGEN DIMERS DISSOCIATION; SHALLOW THERMAL DONORS; SILICA PRECIPITATES;

DIFFUSION IN SOLIDS;

EID: 0030264231     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00185929     Document Type: Article

References (41)

1. F. SHIMURA (ed.), "Oxygen in silicon, semiconductors and semimetals" (Academic Press, New York, 1994) Vol. 42.
2. S. MAHAJAN (ed.), "Handbook on semiconductors, materials, properties and preparation" (North Holland, Amsterdam, 1994), Vols. 3a and 3b.
3. C. S. FULLER, J. A. DITZENBERGER, N. B. HANNAY and E. BUEHLER, Phys. Rev. 96 (1954) 833.
4. W. KAISER, H. L. FRISCH and H. REISS, ibid. 112 (1958) 1546.
5. A. R. BEAN and R. C. NEWMAN, J. Phys. Chem. Solids 33 (1972) 255.
6. W. GÖTZ. G. PENSL and W. ZULEHNER, Phys. Rev. B46 (1992) 4312.
7. N. WEILWES, J.-M. SPAETH, W. GÖTZ and G. PENSL, Semicond. Sci. Technol. 9 (1994) 1632.
8. R. C. NEWMAN, Mater. Res. Soc. Symp. Proc. 59 (1986) 205.
9. R. BULLOUGH and R. C. NEWMAN, Rep. Prog. Phys. 33 (1970) 101.
10. U. GÖSELE, Mater. Res. Soc. Symp. Proc. 59 (1986) 419.
11. S. TAKEDA, M. KOHYAMA and K. IBE, Phil. Mag. A70 (1994) 287.
12. H. BENDER and J. VANHELLEMONT, in "Handbook on semiconductors", edited by T. S. Moss and S. Mahajan (North Holland, Amsterdam, 1994) Vol. 3b, p. 1637.
13. P. DEÁK, L. C. SNYDER and J. W. CORBETT, Phys. Rev. B45 (1992) 11,612.
14. A. OURMAZD, W. SCHRÖTER and A. BOURRET, J. Appl. Phys. 56 (1984) 1670.
15. R. C. NEWMAN, Mater. Sci. Engng. B36 (1996) 1.
16. S. A. McQUAID, M. J. BINNS, C. A. LONDOS, J. H. TUCKER, A. R. BROWN and R. C. NEWMAN, J. Appl. Phys. 77 (1995) 1427.
17. J. W. CORBETT, R. C. McDONALD and G. D. WATKINS, J. Phys. Chem. Solids 25 (1964) 873.
18. U. GÖSELE and T. Y. TAN, Appl. Phys. A28 (1982) 79.
19. R. C. NEWMAN and R. JONES, in "Semiconductors and semimetals", edited by F. Shimura (Academic Press, New York, 1994) Ch. 8, p. 289.
20. P. D. SOUTHGATE, Proc. Phys. Soc. (London) 36 (1960) 385.
21. C. HAAS, J. Phys. Chem. Solids 15 (1960) 108.
22. J. C. MIKKELSEN Jr. Mater. Res. Soc. Symp. Proc. 59 (1986) 19.
23. W. BERGHOLZ, M. J. BINNS. G. R. BOOKER. J. C. HUTCHISON, S. H. KINDER, S. MESSOLORAS, R. C. NEWMAN, R. J. STEWART and J. G. WILKES, Phil. Mag. B59 (1989) 499.
24. F. M. LIVINGSTON, S. MESSOLORAS, R. C. NEWMAN, B. C. PIKE, R. J. STEWART. M. J. BINNS, W. P. BROWN and J. G. WILKES. J. Phys. C: Solid State Phys. 17 (1984) 6253.
25. S. MESSOLORAS, R. C. NEWMAN, R. J. STEWART and J. H. TUCKER. Semicond. Sci. Technol. 2 (1987) 14.
26. W. GÖTZ. PhD thesis, Universität Erlangern-Nürnberg (1993).
27. R. C. NEWMAN, M. CLAYBOURN, S. H. KINDER, S. MESSOLORAS, A. S. GATES and R. J. STEWART, in Proceedings of the Fifth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1986, edited by H. R. Huff, T. Abe and B. Kolbesen, (Pennington, Electrochemical Society, 1984) Vol. 86-4, p. 766.
28. T. Y. TAN, R. KLEINHENZ and C. P. SCHNEIDER, Mater. Res. Soc. Symp. Proc. 59 (1986) 195.
29. M. J. BINNS, S. A. McQUAID, R. C. NEWMAN and E. C. LIGHTOWLERS, Semicond. Sci. Technol. 8 (1993) 1908.
30. S. K. ESTREICHER, Phys. Rev. B41 (1990) 9886.
31. R. JONES, S. ÖBERG and A. UMERSKI, Mater. Sci. Forum 83-87 (1991) 551.
32. V. P. MARKEVICH, M. SUEZAWA and K. SUMINO, ibid. 196-201 (1995) 915.
33. N. G. SEMALTIANOS, R. C. NEWMAN. E. C. LIGHTOWLERS, Unpublished work.
34. S. A. McQUAID, R. C. NEWMAN and E. MUÑOZ, Mater. Sci. Engng. B36 (1996) 171.
35. S. A. MCQUAID, R. C. NEWMAN and E. MUÑOZ, Mater. Sci. Forum 196-201 (1995) 1309.
36. R. E. PEALE, K. MURO and A. J. SIEVERS, ibid. 65-66 (1990) 151.
37. S. A. McQUAID, R. C. NEWMAN and E. C. LIGHTOWLERS, Semicond. Sci. Technol. 9 (1994) 1370.
38. N. G. SEMALTIANOS, R. C. NEWMAN, J. H. TUCKER, E. C. LIGHTOWLERS, T. GREGORKIEWICZ, I. ZEVENBERGEN and C. A. J. AMMERLAAN, Unpublished work.
39. YU. V. MARTYNOV, T. GREGORKIEWICZ and C. A. J. AMMERLAAN, Phys. Rev. Lett. 74 (1995) 2030.
40. Y. MATUKURA, J. Phys. Soc. Jpn 12 (1957) 103.
41. C. S. FULLER and R. A. LOGAN. J. Appl. Phys. 28 (1957) 1427.