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Volumn 131-132, Issue , 2003, Pages 87-98

Ballistic electrons in GaAs and ZnS

Author keywords

Avalanching; Ballistic electrons; Electroluminescence; Electron phonon scattering; Impact ionization; Vacuum emission spectroscopy

Indexed keywords

COMPUTER SIMULATION; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; IONIZATION; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; ZINC SULFIDE;

EID: 16444368553     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(03)00108-7     Document Type: Article
Times cited : (11)

References (41)
  • 35
    • 0242695524 scopus 로고
    • New series III/22a Landoldt-Börnstein, numerical data and functional relationships in science and technology
    • Springer-Verlag, Berlin/Heidelberg/New York/London/Paris/Tokyo. Chapter 3.2 Zinc sulfide (ZnS)
    • New series III/22a Landoldt-Börnstein, numerical data and functional relationships in science and technology. Madelung O. Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII-Compounds. 1987;167-176 Springer-Verlag, Berlin/Heidelberg/New York/London/Paris/Tokyo. Chapter 3.2 Zinc sulfide (ZnS).
    • (1987) Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII-Compounds , pp. 167-176
    • Madelung, O.1
  • 36
    • 0012063405 scopus 로고
    • Berlin: Verlag Technik
    • Paul R. Halbleiterphysik. Vol. 1:1974;Verlag Technik, Berlin.
    • (1974) Halbleiterphysik , vol.1
    • Paul, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.