Band-to-band tunneling related effects in a thin MOS structure

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 180-184

  Vexler, M I ^a   Shulekin, A F ^a   Grgec, D ^b   Grekhov, I V ^a   Meinerzhagen, B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Band to band; C V curves; I V curves; Inversion layer; MOS; Tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRIC POTENTIAL; ELECTRON TUNNELING; INTERFACES (MATERIALS); MICROELECTRONICS; MOSFET DEVICES; SILICA;

INVERSION LAYERS;

MOS DEVICES;

EID: 1642634435     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.033     Document Type: Conference Paper

References (10)

1. SEMATECH, The International Technology Roadmap for Semiconductors, 2001.
2. Eitan B., Pavan P., Bloom I., Efraim A., Frommer A., Finzi D. IEEE Trans. EDL-21. 2000;543.
3. Kareva G.G. Tech. Phys. Lett. 23:1997;157.
4. R. Khlil, Y. Jin, A. El Hdiy, et al., 13-ème Journée Nanotechnologie, Paris, 2003.
5. Choi C.-H., Goo J.-S., Oh T.-Y., Yu Z., Dutton R.W., Bayoumi A., Cao M., Voorde P.V., Vook D., Diaz C.H. IEEE Trans. EDL-20. 1999;292.
6. Schenk A. Solid-State Electron. 36:1993;19.
7. Hurkx G.A.M., Klaassen D.B.M., Knuvers M.P.G. IEEE Trans. ED-39. 1992;331.
8. Sze S.M. Physics of Semiconductor Devices. 1981;Wiley, New York. (Chapter 9).
9. Chu K.M., Pulfrey D.L. IEEE Trans. ED-35. 1988;188.
10. Kareva G.G., Vexler M.I., Grekhov I.V., Shulekin A.F. Semiconductors. 36:2002;889.