New properties created in metal-oxide-silicon structures by reducing their dimensional parameters to the nanometer range

Technical Physics Letters

Volumn 23, Issue 2, 1997, Pages 157-159

  Kareva, G G ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039327299     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1261570     Document Type: Article

References (7)

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4. F. Capasso, S. Sen, and F. Beltram, High-Speed Semiconductor Devices (Wiley, New York, 1990).
5. A. Goetzberger, Bell Syst. Tech. J. 45, 1097 (1966).
6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
7. G. G. Kareva, Patent "Superlattice" Russian Federation, No. 2 062 529, Bulletin No. 17, 1996.