Reduction of defect states of tantalum oxide thin films with additive elements

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 531-533

  Salam, K M A ^a   Fukuda, Hisashi ^a   Nomura, Shigeru ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Insulating material; Metal insulator semiconductor structure; Metalorganic decomposition; Tantalum oxide; Thermally stimulated current; Thin dielectric film

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DECOMPOSITION; DIELECTRIC FILMS; ELECTRIC CONDUCTANCE; INSULATING MATERIALS; TANTALUM COMPOUNDS;

METAL INSULATOR SEMICONDUCTOR STRUCTURE; METALORGANIC DECOMPOSITION; TANTALUM OXIDE; THERMALLY STIMULATED CURRENT; THIN DIELECTRIC FILM;

THIN FILMS;

EID: 1642634083     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.04.001     Document Type: Conference Paper

References (16)

1. DiMaria D.J., Stathis J.H. Appl Phys Lett. 74:1999;1752.
2. Lo S.H., Buchanan D.A., Taur Y., Wang W. IEEE Electron Device Lett. 18:1997;209.
3. Kamiyama S., Lesaicherre P-.Y., Suzuki H., Sakai A., Nishiyama I., Ishitani A. J Electrochem Soc. 140:1993;1617.
4. Shinriki H., Nakata M. IEEE Trans Electron Devices. ED-38:1991;455.
5. Cava R.F., Peck W.F. Jr., Krajewski J.J. Nature. 377:1995;215.
6. Fujikawa H., Taga Y. J Appl Phys. 75:1994;2538.
7. Joshi P.C., Cole M.W. J Appl Phys. 86:1999;871.
8. Lin J., Nakabayashi M., Tsukune A., Yamada M. Appl Phys Lett. 74:1999;2370.
9. Hori T. Gate dielectrics and MOS ULSIs. vol. 34. New York: Springer; 1997. p. 9 [chapter 1].
10. Zhang Z.G., Liu J.S., Wong Y.N., Zhu Z.S., Yan F., Chen X.B., Shen H.M. Appl Phys Lett. 73:1998;788.
11. Badih El-Kareh, Fundamentals of semiconductor processing technology. Massachusetts, USA: IBM Corporation; 1995. p. 431 [chapter 6].
12. Lee B.H., Kang L., Nieh R., Qi W.J., Lee J.C. Appl Phys Lett. 76:2000;1926.
13. Chen D.K., Das M.B. IEEE Trans Electron Devices. ED-32:1985;2506.
14. Hori T. Gate dielectrics and MOS ULSIs, vol. 34. New York: Springer; 1997. p. 45 [chapter 2].
15. Lau WS, Tan TS, Sandler NP, Page BS. Extended Abstracts on the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994. p. 781.
16. Thom R.D., Koch T.L., Langan J.D., Parrish W.J. IEEE Trans Electron Devices. 27:1980;160.