Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 136-139

  Avellan A ^a   Miranda, E ^b   Schroeder, D ^a   Krautschneider, W ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

Breakdown; Gate oxide; Reliability; Soft breakdown

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; HEAT CONDUCTION; MATHEMATICAL MODELS; MOS DEVICES; QUANTUM THEORY; THERMAL EFFECTS;

BREAKDOWN; GATE OXIDES; SOFT BREAKDOWN (SBD);

GATES (TRANSISTOR);

EID: 1642618944     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.029     Document Type: Conference Paper

References (12)

1. Stathis J. IEEE Trans. Dev. Mater. Relat. 1:2001;43-59.
2. Miranda E., et al. IEEE Trans. Electron Dev. 47:2000;82-89.
3. Lee S., et al. Proc. IEDM. 1994;605-607.
4. Okada K., Taniguchi K. Appl. Phys. Lett. 70:1997;351-353.
5. Houssa M., et al. J. Appl. Phys. 84:1998;4351-4355.
6. Nigam T., et al. Proc. IRPS. 2003;417-423.
7. Miranda E., et al. Proc. IRPS. 2001;367-379.
8. Avellán A., et al. Proc. IRPS. 2003;580-581.
9. Schroeder D., Avellán A. Appl. Phys. Lett. 82:2003;4510-4512.
10. Tekman E., Ciraci S. Phys. Rev. B. 43:1991;7145.
11. Hadjadj A., et al. J. Appl. Phys. 89:2001;7994.
12. S. Bruyere, Ph.D. Thesis, INP Grenoble, vol. 143, 2000.